Formation of fine pattern

Abstract

Abstract PURPOSE:To simplify the formation process of the fine pattern by a method wherein a resist film is provided on a metal alcoxide oxide film on a polymer film formed on a material to be etched, and after the oxide film is etched using the resist film thereof as the mask, the polymer film is etched using the remaining oxide film as the mask, and the material to be etched is etched is etched using the still remaining polymer film as the mask. CONSTITUTION:After the organic polymer film is formed on the material to be etched, alcoxide containing the metal of titanium, tin, aluminum, etc., is dissolved in an organic solvent to be applied, and by heating it, the metal oxide is generated, and is used as the middle layer. Alcoxide containing the metal thereof is converted into the metal oxide by heating at the temperature of 100 deg.C or more in air, and the etching speed according to reactive sputtering by carbon gas becomes to nearly zero. Accordingly, the film of the degree of several hundreds Angstrom thickness can be used as the mask when the organic layer of the first layer of 1-2mum is to be etched. While, because the metal oxide converted by heating can be etched easily using gas of CCl4, CF4, etc., the pattern can be transcribed using the thin resist at the uppermost layer as the mask.

Inventors

• 👤 Shigeyoshi Suzuki
• 👤 成嘉 鈴木

Bibliographic Details