Semiconductor laser

Abstract

Abstract PURPOSE:To incerase the quantity of beams oozing to a guide layer, and to elevate an optical damage level while enabling low threshold oscillation, by constituting the laser by an active layer, the guide layer, a refractive index thereof is smaller than that of the active layer, and a clad layer, a refractive index thereof is smaller than that of the guide layer, and previously forming a groove, which is shallow at a central section and is deep at both end sections, in the longitudinal direction of a resonator. CONSTITUTION:An N-type GaAs block layer 11 is grown on a P type GaAs substrate 10 as an absorbing layer for oscillating beams, the whole surface is coated with an SiO2 film 12, and the thickness of the central section of the layer 11 is thinned through etching while the groove 20, which is shallow at the central section and is deep at both end sections, is formed in the central axis direction of the substrate 10. The P type Al0.4Ga0.6As clad layer 13 and the undoped Al0.15Ga0.85As active layer 14 are laminated and grown while being interrupted at the end sections of the groove 20 and on the layer 11, and the N type Al0.27 Ga0.73As guide layer 15, an N type Al0.4Ga0.6As clad layer 16 and an N type Al0.02Ga0.98As cap layer 17 are laminated on the whole surface.

Inventors

• 👤 Shinsuke Ueno
• 👤 上野　眞資

Bibliographic Details