Semiconductor device

Abstract

Abstract PURPOSE:To obtain the device of high mobility by growing a P type or P<+> type GaAlAs layer sufficiently thin in an extent in which a depletion layer is generated on a GaAs layer, to which an impurity is not added, laminating a thin GaAlAs layer, to which an impurity is not added, on the GaAlAs layer through the same thick semiconductor layer, coating the thin GaAlAs layer with a sufficiently thick GaAs layer and forming a two-dimensional electron gas layer to the sufficiently thick GaAs layer. CONSTITUTION:The GaAs layer 22, to which the impurity is not added and thickness thereof is brought to approximately 1mum, is grown on a semi-insulating GaAs substrate 21, Be is added onto the layer 22, and the P type or P<+> type Ga1-xAlxAs layer 23 sufficiently thin in the extent of approximately 1X10<18>/cm<3> hole density is grown. An N<+> type Ga1-xAlxAs layer 24, to which Si is added in size thicker than the layer 23 and electron density thereof is made the same extent as the layer 23, is deposited on the layer 23, and the thick GaAs layer 26 to which an impurity is not added is grown through the thin Ga1-xAlxAs layer 25 to which the impurity is not added. A source electrode 27 and a drain electrode 29 are formed on the layer 26 through N<+> type GaAs layers 28 and 30 formed in the layer 26, and a gate electrode 31 is formed between these electrodes.

Inventors

• 👤 Haruhisa Kinoshita
• 👤 木下　治久
• 👤 Masahiro Akiyama
• 👤 秋山　正博
• 👤 Toshimasa Ishida
• 👤 俊正 石田

Bibliographic Details