High-speed semiconductor element

Abstract

Abstract PURPOSE:To obtain stable Schottky junction characteristics by alternately laminating layers of wide forbidden band width surrounding a two-dimensional electron layer in thickness of approximately several atomic layers and constituting the layers of wide forbidden band width by AlGaAs layers of different compositions in the semiconductor element using the electron layer as a channel layer. CONSTITUTION:A GaAs buffer layer 22 and an AlGaAs buffer layer 23 are laminated on a GaAs substrate 21 and grown, and a superlattice layer 24 of wide forbidden band width is formed on the layer 23 in approximately 1,000Angstrom thickness. In this case, AlyGa1-yAs and AlxGa1-xAs (0<=x<=1, xnot equal to y) are used as the layer 24, and the thickness is made thickness of approximately several atomic layers and they are previously laminated alternately. A non-doped high- purity GaAs layer 25 is grown on the whole surface in approximately 5,000Angstrom , a gate electrode 28 is formed to the surface of the central section, and a source electrode 26 and a drain electrode 27 are formed on both sides of the electrode 28. Accordingly, the channel layer by a two-dimensional electron gas 29 is generated in the lower interface of the layer 25 positioned between the electrodes 26 and 27.

Inventors

• 👤 Seiji Nishi
• 👤 清次 西
• 👤 Haruhisa Kinoshita
• 👤 木下　治久
• 👤 Masahiro Akiyama
• 👤 秋山　正博
• 👤 Toshimasa Ishida
• 👤 俊正 石田

Bibliographic Details