Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To obtain a thin film transistor having the favorable characteristic by a method wherein an a-Si film and an SiO2 film are formed continuously according to the plasma CVD method without breaking the vacuum condition at the formation process of a passivation film. CONSTITUTION:A gate electrode (NiCr) 21 is formed on a glass substrate 20, and a gate insulating SiO2 film 22 is formed in a plasma CVD device introduced with mixed gas of nitrous oxide gas and silane gas or mixed gas of oxygen gas and siliane gas. Then after mixed gas is exhausted without breaking the vacuum condition, an a-Si film 23 is formed according to the plasma CVD method using silane gas, the substrate is taken out from the device, and a source electrode 24 and a drain electrode 25 are formed. Similarly, the a-Si film 26 and the SiO2 film 27 are formed continuously without breaking the vacuum condition to make as the passivation film 28. Because the a-Si film 26 acts as the buffer layer, no damage is applied to the channel part, increase of the surface state on the surface of the a-Si film 23 of the semiconductor layer is not generated, and the characteristic is not deteriorated.

Inventors

• 👤 Toshiro Kodama
• 👤 敏郎 児玉
• 👤 Satoru Kawai
• 👤 悟 川井
• 👤 Yasuhiro Nasu
• 👤 安宏 那須
• 👤 Kenichi Yanai
• 👤 梁井　健一
• 👤 Nobuyoshi Takagi
• 👤 高城　信義

Bibliographic Details