Pattern formation

Abstract

Abstract PURPOSE:To form a resist pattern with little reduction of film with a dry method by placing a monomer including Si incontact with an organic thin film which is irradiated with a radioactive ray, forming thereby a polymer including Si to the irradiated area and thereafter processing it with the O2 plasma. CONSTITUTION:An organic thin film 2 is formed in the thickness of 0.3mum-5mum on a silicon wafer or a substrate 1 such as chromium vacuum-deposited glass and such film is then irradiated with a radioactive ray 3 such as electron beam, X-ray or ion beam in the vacuum chamber. Thereafter, the substrate is disposed in the same or other vacuum-chamber, an organic compound steam including Si is introduced into the vacuum chamber and the inside thereof is kept at the prescribed pressure. After a constant period, a polymer film 4 including Si is selectively formed at the radioactive ray 3 irradiating area on the organic thin film 2. Finally, this substrate is subjected to the O2 plasma. Thereby, the organic thin film is removed only from the area where there is no pattern of polymer film 4 and a resist pattern is formed.

Inventors

• 👤 Yuichi Kokado
• 👤 雄一 小角
• 👤 Makoto Kito
• 👤 鬼頭　諒
• 👤 Yoshinori Honda
• 👤 好範 本田

Bibliographic Details