Manufacture of metal insulator semiconductor field-effect semiconductor device

Abstract

Abstract PURPOSE:To adjust threshold voltage by forming a gate insulating film and a striped gate electrode on a semiconductor substrate and implanting impurity ions to the semiconductor substrate from the direction of an angle facing a side surface in at least one longitudinal direction of the striped gate electrode. CONSTITUTION:A field insulating film 2 is formed through a selective oxidation method, and the gate insulating film 3 is formed through a thermal oxidation method. A polycrystalline silicon film is formed through a chemical vapor deposition method, and the polycrystalline silicon film is patterned to form the striped gate electrode 4. Arsenic ions are introduced through an ion implantation method while using the gate electrode 4 and the gate insulating film 3 as masks to form a source region 5 and a drain region 6. A p type region 8 is formed by obliquely implanting boron ions. Boron ions may be implanted at the angle facing the side surface of the striped gate electrode 4 without being limited by angles.

Inventors

• 👤 Takashi Ito
• 👤 隆司 伊藤

Bibliographic Details