Electron beam exposing device

Abstract

Abstract PURPOSE:To simplify the correction of proximity effect by a method wherein, pertaining to each exposure pattern grown in rectangularly divided form, the irradiation dose and the amount of measurement correction, with which desired exposure pattern can be obtained, are calculated and a measurement correction is performed in such a manner that the pattern shape after exposure will not be changed. CONSTITUTION:At the sample point SO1, the formula Q1F(r1)+Q2F(r2)+Q3F(r3)+ Q4F(r4)=E is formed. At this point, Q1-Q4 are the irradiation doses of exposure patterns 1-4, and F(r1) (i=1-4) is the strength of exposure of patterns 1-4. Also, the exposure strength F(r2) of the exposure pattern 2 is indicated by the formula F(r2)= integral integral f(r)dS. As the exposure pattern 2 is a submicron pattern and it is substantially effected by an exposure pattern 3, the exposure pattern 2 is eliminated when the measurement correction amount l of the exposure pattern 2 exceeds pattern length H, new splitting lines are provided as shown by the broken line in the diagram for the exposure pattern 1 which comes in contact with the eliminated exposure pattern 2, and an exposure pattern 1A is provided. As for the splitted exposure patterns 1 and 1A, they are corrected by having a correction amount for each of them. Through these procedures, the correction amount for the measurements and the irradiation dose of the electron beam are determined when the pattern data is prepared.

Inventors

• 👤 Yasuhide Machida
• 👤 町田　泰秀
• 👤 Noriaki Nakayama
• 👤 中山　範明

Bibliographic Details