Solid-state image pick-up sensor

Abstract

Abstract PURPOSE:To obtain two kinds or more of images by obtaining image information for every kind of photoelectric conversion materials by a method wherein an element is constructed by dividing the element surface with two kinds or more of photoelectric conversion materials. CONSTITUTION:An n<+> accumulation diode 8-a and a photo diode 3-b the same as vertical CCD's 2-a, b composed of n<+> buried channel CCD's are formed on a p type Si substrate 1. The element is so constructed as to have two kinds of photo electric conversion materials in the vertical direction; the left side is the photoconversion part of a photoconductor, and the right side is the photo conversion part of an Si wafer part. For this purpose, a hole is bored at a part of an insulation layer 5 on the accumulation diode 8-a after forming a poly Si electrode 4-a serving as the gate electrode for transfer purpose and the insulation film 5, and a lower electrode 9-a of Al, etc. is formed except above the adjacent photo diode 3-b. In the same manner, a photoconductor 10 and a clear electrode 11 are formed except above the photo diode.

Inventors

• 👤 Okio Yoshida
• 👤 吉田　興夫
• 👤 Hisashi Morioka
• 👤 森岡　久

Bibliographic Details