Plasma cvd apparatus

Abstract

Abstract PURPOSE:To prevent the generation of flakes on the products by reaction on the film to be formed by introducing reaction gas into the cylindrical space through the mesh type electrode and exhausting unwanted product by reaction and the carrier gas through the other mesh type electrode. CONSTITUTION:A reaction container 2 is provided with a system 97 for supplying reactive gas and a system 98 for vacuum exhausting unwanted product by reaction and the carrier gas. The reactive gas is supplied to the mesh type cathode 23 for plasma discharge from the supply port 27. On the other hand, the mesh type anode 25 is also provided on the hood of exhausting means 47. A cylindrical space 100 is provided between both electrodes 23, 25 in order to guide the reactive gas. A substrate 5 is disposed in the cylindrical space 100 and is heated by the heating lamps 18, 18'. The reactive gas is converted to the plasma when an electrical energy is supplied to both electrodes 23, 25 and a product by reaction is formed on the substrate 5.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details