Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To remove the disconnection of a metallic film, and to simplify processes by forming the corner sections of a semiconductor chip to a curved-surface shape or a chamfering shape. CONSTITUTION:Source electrodes 1, drain electrodes 2 and gate electrodes 3 are formed to the surface of an N type GaAs crystal layer grown on a semi- insulating GaAs substrate 4, and the GaAs substrate, the back thereof is etched, is pasted to a substrate 5 in GaAs or Si or the like with a resin 6, and grooves are formed mechanically. The semiconductor substrate is chamferred and separated into the chips through etching treatment using an etching liquid of an ammonia group, a sulfuric acid group, a phosphoric acid group, etc., the semiconductor substrate is plated, and lastly the resin 6 s removed and the chips are separated.

Inventors

• 👤 Kazuhide Goda
• 👤 郷田　和秀
• 👤 Masahiro Hagio
• 👤 萩尾　正博
• 👤 Shutaro Nanbu
• 👤 修太郎 南部

Bibliographic Details