Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device which shows a small increment of leak current in the moisture proof test and moreover results in less problem of corrosion and disconnection by forming a baked layer of polyimidine resin at the surface. CONSTITUTION:A baked layer 6 of the polyimidine resin expressed by the general equation 1 and/or general equation 2 is formed on the surface of a semiconductor element 1 of a resin sealed type semiconductor device where semiconductor element 1 is sealed by resin mold 5. For example, the polyimidyne resin is applied on the surface of semiconductor element 1 in the thickness of 30- 100mum, except for the bonding pad 2. Thereafter, the element is heated for an hour at 200 deg.C and moreover the five hours at 350 deg.C. Thereby the polyimidine resin is bridged and the surface of semiconductor element 1 is protected by the bridged polyimidine resin layer 6. The semiconductor element 1 is secured to a lead frame 4, the bonding pad 2 is connected to the lead frames 4a, 4b by a metal lead 3 and the element is sealed by an epoxy resin 5.

Inventors

• 👤 Teru Okunoyama
• 👤 奥野山　輝

Bibliographic Details