Method and apparatus for plasma coating

Abstract

Abstract PURPOSE:To form high quality films of materials in very wide range at a low temperature, facilitate maintenance and improve yield by ionizing sputter atoms with plasma flow and forming a film by giving kinetic energy. CONSTITUTION:A magnetic coil 10 is provided at the circumference of a plasma generating chamber 1 and intensity of magnetic field generated thereby is determined so that the condition of resonance of electron cyclotron by microwave is established at least at a part of inside of plasma generating chamber 1. Moreover, a magnetic field generated by a magnetic coil 10 not only serves for resonance of electron cyclotron in the plasma generating chamber 1 but also effectuates a sample chamber 2. The M atoms sputtered are ionized into M<+> within the flow of plasma 6 and is integratingly transferred to a sample board 8 together with the flow of plasma 6. Thereby, a thin film is formed. Accordingly, a film is formed only to a region limited where the sample board 8 is irradiated by the flow of plasma 6 and the film can be formed very efficiently.

Inventors

• 👤 Seitaro Matsuo
• 👤 松尾　誠太郎
• 👤 Toshiro Ono
• 👤 俊郎 小野

Bibliographic Details