Magnetoresistance effect element

Abstract

Abstract PURPOSE:To contrive to stabilize the characteristic of the titled element by a method wherein high melting point metal thin films hard to generate an alloy or an intermetallic compound mutually are interposed between ferromagnetic material thin film circuit patterns on an insulating substrate and Al metal circuit patterns in relation thereto. CONSTITUTION:The Al circuit patterns 15 are evaporated in the prescribed form on an SiO2 film 14 on an Si substrate 12, the ferromagnetic material thin film circuits 17 according to the patterns 11a, 11b of an Ni-Co alloy are evaporated interposing Ti films 16 between them, and are protected by SiO2 layers 18. The Al patterns 15 are protruded at the parts corresponding to lead out electrodes 13a-13c, and openings 19 are formed in the SiO2 layers 18 to be made as the electrode lead out parts. According to this construction, the element can be prevented surely from growth of the Ni-Al intermetallic compound when a heat treatment is performed for improvement of the ohmic property, junction intensity of the patterns 15, 17 becomes to about 5 times, the magnetoresistance effect is enhanced by about 30%, and moreover the characteristic is extremely stabilized.

Inventors

• 👤 Kenichi Ao
• 👤 建一 青
• 👤 Yoshi Yoshino
• 👤 吉野　好

Bibliographic Details