charge transfer device

Abstract

Abstract PURPOSE:To improve transfer efficiency by facilitating the shunt, confluence and rotation of a transfer line by a method wherein the length parallel with the charge exhaust side of electrodes arranged in a semiconductor is, in a part, made larger than the length along the direction vertical to the exhaust side. CONSTITUTION:The electrodes are arranged on one main surface of the semiconductor substrate via an insulation layer. The shape of the electrode consists of a hexagon whereto an equilateral triangle ABC is cut by segments A'A'', B'B'', C'C'' at equal distances from each vertex of an equilateral triangle ABC. The charge transfer diretion Y becomes the direction vertical to the exhaust side A''C'' wherefrom the charges are exhausted to the adjacent potential well. Therefore, the electrode length Wi parallel with the exhaust side A''C'' is larger than the length (a) along the transfer direction Y, in the range from the segment B'B'' which is (a) long to the segment A'C' which is (b) long. As the result, a new acceleration voltage along the transfer direction is added beside a fringing electric field, and accordingly the transfer efficiency is improved.

Inventors

• 👤 Hiroshi Morito
• 👤 宏 森戸
• 👤 Hajime Matsuda
• 👤 肇 松田

Bibliographic Details