Exfoliating method of resist

Abstract

Abstract PURPOSE:To shorten plasma-ashing time by preparatorily heating a substrate to be treated with a resist film to be exfoliated, arranging the substrate in a plasma-ashing device and incinerating and removing the resist film by oxygen plasma while being heated. CONSTITUTION:The master substrate 7 to which an etching process is completed is passed through a conveyor oven, etc., and the temperature of the substrate and the temperature of a resist-mask-pattern are elevated up to approximately 100-120 deg.C. The mask substrate 7 is placed instantaneously on a target electrode 4 heated previously at 100-120 deg.C of the plasma-ashing device during a time when its temperature drops. The inside of the treating chamber of the ashing device is brought to an oxygen atmosphere at approximately 0.1-0.5Torr pressure, high-frequency power of values such as approximately 13.56MHz 300- 500W is applied between the target electrode 4 and an opposite electrode 6, and O2 plasma is generated between both electrodes. The resist is oxidized by oxygen ions excited by plasma, and gasified and removed, and a photo-mask is completed.

Inventors

• 👤 Hiroshi Maruyama
• 👤 浩 丸山

Bibliographic Details