Semiconductor device

Abstract

Abstract PURPOSE:To form a PIN diode which can operated at a low voltage by sequentially forming an N type gallium arsenic layer having lower impurity density than an N type semiconductor substrate, an non-doped aluminum gallium arsenic layer and an N type aluminum gallium arsenic layer having impurity density lower than the substrate on the substrate. CONSTITUTION:A non-doped AlXGa1-XAs layer 7 of approx. 0.1(mum) thick is formed between an N<-> type GaAs layer 3 and an N<-> type AlXGa1-XGa (X=0-0.3) layer 4 in a PIN diode. The layer 7 is formed by continuously growing in the same manner as the other layer by an MBE method. With this structure, effective carrier density distribution in the hetero junction boundary of the PIN diode can be remarkably flattened. In this manner, the voltage applied to the corresponding part can be reduced, and the operating voltage can be reduced by approx. 10(V).

Inventors

• 👤 Toshio Fujii
• 👤 俊夫 藤井
• 👤 Masanori Ito
• 👤 正規 伊藤

Bibliographic Details