Semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To eliminate the need for forming the sloping of a stepped shape of an electrode window, and to prepar the device easily by forming a semiconductor region to an Si substrate, coating the whole surface containing said region with an insulating layer, forming the electrode window, setting up Si obtained by changing polycrystalline Si into a single crystal into the window, and coating Si with a metallic electrode in Al, etc. CONSTITUTION:Two thick field oxide films 4 are formed onto the P type Si substrate 1, the semiconductor regions 6, 7 are each diffused and formed positioned between said oxide films, and a gate electrode 9 is formed onto the substrate 1 exposed between these regions through a gate oxide film 8, and surrouned by an oxide film 10. The whole surface is coated with a PSG film 11, the electrode windows 12, 13 are each bored made corresponding to the regions 6, 7, and the polycrystalline Si layer 15 is grown on the whole surface containing the electrode windows. Laser beams 16 are irradiated to melt the layer 15, the layer 15 is pured into the windows 12, 13 while the regions 6, 7 exposed into the windows 12, 13 are used as crystalline seeds, and the layer 15 is changed into single crystals 17. The layer 15 except the single crystals is removed, and the upper ends of the single crystals 17 are coated with Al wiring 18.

Inventors

• 👤 Soichiro Nakai
• 👤 中井　宗一郎
• 👤 Kazunori Imaoka
• 👤 今岡　和典
• 👤 Takao Miura
• 👤 隆雄 三浦

Bibliographic Details