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JPS5935484A Expired / Lapsed JP ⏱️ 0.0 years remaining

Solar cell

Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1982-08-23
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Granted: —
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Expires: 2002-08-23
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Abstract

Abstract PURPOSE:To contrive to enhance property modifying facility and to reduce cost of the solar cell by a method wherein groove structure is provided on a substrate, and semiconductor single crystal films are made to grow thereon. CONSTITUTION:The lattice type metal film 8 is constructed on the glass substrate 7. The N type (or the P type) semiconductor 2 is made to grow on the film 8 and the substrate 7 thereof. Then the P type (or the N type) semiconductor 3 is made to grow on the semiconductor 2, and an ohmic electrode 9 is provided on the semiconductor 3. Sunlight enters through the substrate 7, passes the intervals of the electrode 8, and permeates into the layers 2, 3 to generate electromotive force. According to the construction thereof, the lattice type or the grating type electrode 8 possesses both of groove structure to make a single crystal to grow. Accordingly, the superior crystal film close to the single crystal can be formed, and the solar cell of high performance and low cost can be obtained.

Inventors

  • 👤 Akizou Iida
  • 👤 飯田 昭参

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-02 19:13
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5626429A Cited
JPS56152277A Cited

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