Complementary metal-oxide semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain the CMOS inverter of high degree of integration by each forming n<+> type drain region and source region and p<+> type drain region and source region in three dimensions through insulating films, boring a recessed section among these regions and forming a channel region to the side wall of the recessed section. CONSTITUTION:An n type well region 12 is formed to a p type Si substrate 11, the p<+> type drain region 14 is formed in the region 12, the n<+> type drain region 15 is formed adjacent to the region 12, and these regions are surrounded by an oxide film 13. The whole surface is coated with an SiO2 film 16, the n<+> type source region 22 made of polycrystalline Si corresponding to the region 15 and the p<+> type source region 21 corresponding to the region 14 are each formed on the film 16 while holding a polycrystalline Si layer 20', and the regions 22, 21 are surrounded by an oxide film 19. The recessed section 25 intruding in the substrate 11 is bored from the position of the layer 20', and the polycrystalline Si channel layer 282 being in contact with the regions 15 and 22 and the channel region 281 being in contact with the regions 14 and 21 are each formed to the side wall. A gate electrode 31 is buried between the regions 282 and 281.

Inventors

• 👤 Yoshihide Nagakubo
• 👤 長久保　吉秀

Bibliographic Details