Thin film resistance circuit

Abstract

Abstract PURPOSE:To enable to increase the accuracy and to sufficiently protect a thin film resistance circuit against external contamination such as moisture, dusts and impurity ions by forming an SiO2 passivation film on a thin film resistance element formed on a substrate and an SiN passivation film further thereon. CONSTITUTION:A semiconductor element and a thin film resistance element are electrically connected, and aluminum wirings 16 formed in a circuit are formed in a thickness of 8,000-20,000Angstrom . Then, in order to protect by covering this semiconductor circuit and the thin film resistance circuit, an SiO2 passivation film 19 is formed by a CVD method in a thickness of 1,500-3,000Angstrom . Further, an SiN passivation film 20 is formed by a CVD method thereon in a thickness of 3,000-10,000Angstrom . Windows are then opened at 18 on part of the two passivation films, and electrodes are necessarily led out to an external connection.

Inventors

• 👤 Ichiro Yamashita
• 👤 一郎 山下
• 👤 Hiroshi Kitazaki
• 👤 北崎　博
• 👤 Yukio Takizawa
• 👤 幸雄 滝沢

Bibliographic Details