Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To contrive improvement in the frequency characteristics and the degree of integration of the titled semiconductor device by a method wherein, using a metal electrode as a gate electrode, a gate electrode layer and a source and drain region is formed in a self-matching manner. CONSTITUTION:A silicon oxide film 12 is formed on a semiconductor substrate 11 and a silicon nitride film 13 is formed thereon. Then, a hole is provided by selectively removing said silicon nitride film 13 and the silicon oxide film 12. Subsequently, a silicon oxide film 14 is grown on the region having no silicon nitride film 13 by performing a thermal oxidization using the silicon nitride film 13 on the semiconductor substrate 11 as a mask. Then, a silicon oxide film 14 is grown on a non-active region using the silicon nitride film 13 as an oxidation mask, an ion is implanted without performing an additional process on the silicon nitride film and the like, and source and drain regions 15 and 16 are formed. Then, a thick silicon oxide film 14 alone located on the channel part and its circumference is removed using a pattern 17, and a gate oxide film 18 is newly grown on the region of the pattern 17 located on the exposed silicon substrate 11. Subsequently, the silicon nitride film 13 in the region of code 19 and the oxide film 12 located under the film 13 are removed in order to remove the electrode on the source and drain regions 15 and 16, and a metal is deposited in such a manner that it will make the angle which is almost vertical to the surface of the silicon substrate.

Inventors

• 👤 Masahiko Ueda
• 👤 昌彦 植田

Bibliographic Details