Semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of a swelling in a metallic film such as a mutual wiring layer formed onto the wide section of a conductive layer positioned on the upper side of an insulating film even when a heat-resisting organic resin is used as an inter-layer insulating film by forming a notch section or a hole-shaped broken section or both to the wide section of the conductive layer. CONSTITUTION:The first layer mutual wiring layer 3 and a heat-resisting organic resin layer 4 as the inter-layer insulating film are formed onto a silicon dioxide film 2, the second layer mutual wiring layer containing a bonding pad section 5 and a mutual wiring section 6 is formed onto the layer 4, and the tip section 8 of a metallic small wire 7 is connected to the bonding pad section 5. The notch sections 9 are formed in the fringe section of the bonding pad section 5 and the small holes 10 at a central section only by fixed numbers respectively. Consequently, when the notch section 9 and the broken section 10 are formed, moisture, a gas or the like causing the blistering in a bonding-pad section surface is discharged to the outside through the interface between the bonding pad section 5 and the heat-resisting organic resin layer 4 because paths reaching the outside through the interface are shortened even when moisture or the gas or the like is discharged from the resin layer 4 positioned just under the section 5. Accordingly, the swelling is hardly formed in the bonding pad section 5 even when heat treatment, such as bonding with a substrate, a wire bonding, etc. is executed.

Inventors

• 👤 Takeshi Umegaki
• 👤 梅垣　武士
• 👤 Koichi Konishi
• 👤 小西　孝一
• 👤 Chukei Kaneko
• 👤 金子　忠敬

Bibliographic Details