Semiconductor light-emitting device

Abstract

Abstract PURPOSE:To emit light in a wavelength region approximating to a light-emitting diode of a GaAsP group, to eliminate the need for a diffusion process, to emit a high radiant power output and to enable fining by liquid-growing a second GaAlAs epitaxial layer, a conduction type thereof is reverse to a GaAs substrate and thickness thereof is a specific value or less, onto a first GaAlAs epitaxial layer so as to function as a diode. CONSTITUTION:Zinc is diffused from the surface of a wafer 23 while using insulating films 24 as masks, and p type isolation regions 25 reaching the p type GaAlAs layer 21 are formed. The n type GaAlAs layer 22 is divided by the p type isolation regions 25 at that time, and independent n type island regions 26a, 26b... are formed. p-n junction surfaces among the n type island regions 26a, 26b... and the p type GaAlAs layer 21 function as light-emitting regions. Zinc need not be diffused deeply at that time because the n type GaAlAs layer 22 is sufficiently thin (not more than 10mum). Accordingly, extents in the lateral direction of the p type isolation regions 25 are extremely small in the diffusion process.

Inventors

• 👤 Yoshio Iizuka
• 👤 飯塚　佳男
• 👤 Tetsuo Sekiwa
• 👤 関和　哲男

Bibliographic Details