Semiconductor light emitting device

Abstract

Abstract PURPOSE:To contrive to improve the photo recombination efficiency to a photo transmitter such as an optical fiber by focusing the light emitted from a P-N junction by the lens action of a spherical semiconductor substrate by a method wherein the semiconductor substrate itself which composes a light emitting diode element is formed as a sphere, and the P-N junction is formed at a part thereof. CONSTITUTION:Using an N type GaAs single crystal of the carrier density 7X10<15>cm<-3> as a semiconductor material, it is polished into a sphere of the diameter 200mum. A SiO2, etc. as an insulator is adhered overed the entire surface of this sphere by sputtering method, and an aperture is formed selectively at a part thereof. Next, Zn is diffused and introduced to the depth approx. 5mum through the aperture, and accordingly the P-N junction is formed in this N type GaAs sphere. This diffusion treatment is performed at 700 deg.C. Then, a P-side electrode composed of Au-Zn is formed at this aperture part, further the insulation film is selectively removed, and thereafter an N-side electrode composed of Au-Ge is formed over the surface of the N type GaAs sphere. Since the light L radiated from the light emitting part (P-N junction) 26 is focused at the time of emission from the sphere to the outside, and can emit light at the coupling efficiency approximately twice as large as that of a conventional structure, since the light emitting diode itself is a sphere, in a light emitting diode element having such a structure.

Inventors

• 👤 Kenzo Akita
• 👤 秋田　健三

Bibliographic Details