Semiconductor light-emitting element

Abstract

Abstract PURPOSE:To obtain a light-emitting element, external quantum efficiency thereof is high and an output therefrom is high, by using an internal light-emitting section in the surface light emission type semiconductor light-emitting element as a focal point and oppositely arranging an optical projecting surface or an optical reflecting surface with a concave Fresnel lens type curved to the focal point. CONSTITUTION:An N type InP buffer layer 21, an In1-xGaxAs1-yPy (xapprox.=0.25, yapprox.=0.56) active layer 22, a P type InP layer 23 and a P type InP or P type GaXIn1-xPyAs1-y (xapprox.=0.2, yapprox.=0.4) layer 24 are laminated and grown on an N type InP substrate 20. The surface of the layer 24 is changed into a Fresnel lens type curved surface 26 through a mask-less ion beam process method, and a transparent insulating film 29 consisting of SiO2, etc. is applied to the curved surface, from which a P side electrode 25 and an N side electrode 27 are removed, and the periphery 28 of the curved surface. A film 210 having high reflectivity in Au, etc. is formed on the electrodes 25 and 27 and the film 29, and beams generated in the active layer 22 are projected from the beam extracting surface 21 of the substrate 20. Accordingly, high external quantum efficiency is obtained even when reflected rays are made resorb in the active layer 22.

Inventors

• 👤 Akiko Gomiyo
• 👤 明子 五明
• 👤 Katsuhiko Nishida
• 👤 克彦 西田

Bibliographic Details