Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a fine pattern by selectively irradiating the amorphous Si film on an Si substrate with energy beam and removing said amorphous Si after forming a polycrystalline Si or a compound film with an element in the ambient being in contact therewith. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a P type Si substrate 1, an amorphous Si 4 is then vacuum deposited and the P- added SiO2 5 is formed thereon. The substrate 1 is heated up to about 250 deg.C and it is then converted to the N<+> poly-Si by irradiating the region 4' with the Ar laser beam. A gate electrode 6 is formed by sequentially and selectively etching SiO2 5 and amorphous substance 4. Or, non-additive GaAs 12, n-AlGaAs 13, AlN 14 are formed sequentially on a semi-insulating GaAs 11. The layer 15 is an electron storing layer. Amorphous Si 16 is further formed thereon and is then caused to be in contact with the O2 flow and the region 16' is slectively irradiated with the Ar laser and thereby it is converted to the SiO2 17. The amorphous film 16 is selectively removed, the Si ion is implanted 18 to the region of layer 13 through the SiO2 mask 17. Thereafter, an FET is formed by the existing method. According to this method, a semiconductor device having the high precision pattern can be obtained without the resist.

Inventors

• 👤 Ryoichi Mukai
• 👤 良一 向井

Bibliographic Details