Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability, manufacturing yield rate, and wiring density of an element, by evaporating silicon on a first aluminum layer, and connecting a second aluminum layer through the silicon. CONSTITUTION:A silicon dioxide film 2 is formed on the main surface of a P type silicon substrate 1. On this film, a first layer aluminum film 3 and a silicon film 8 are continuously formed by sputtering evaporation. With a photoresist 9 as a mask, the silicon film 8 and the first layer aluminum film 3 are continuously etched. Then, the photoresist 9 is removed, and thereafter an interlayer insulating film 4 is deposited. In order to provide a hole for a connecting part 5, only the interlayer insulating part 4 is selectively etched, and the silicon film 8 is made to remain. A second aluminum layer 6 is evaporated. The first aluminum layer 3 and the second aluminum layer 6 are contacted through the silicon film 8.

Inventors

• 👤 Seiji Ueda
• 👤 誠二 上田

Bibliographic Details