Formation of diffusion region

Abstract

Abstract PURPOSE:To realize the formation of a shallow p<+>n junction with excellent crystallizability by a method wherein after an n type silicon substrate is activated by ion-implantation, the substrate is subjected to low temperature heat-treatment in a non-oxidizing atmosphere for a short time. CONSTITUTION:An oxide film 2 composed of SiO2 is formed on an n type silicon substrate 1 and an aperture 3, where a diffusion region, which is to be a drain region or a source region, is patterned and formed by etching. Boron fluoride ions 4 are implanted into the diffusion region portion of the n type silicon substrate 1 through the aperture 3. The Ar CW laser annealing is performed by applying an Ar CW laser beam 5 for a short time. After annealing, the n type silicon substrate 1 is subjected to low temperature heat-treatment in a non- oxidizing atmosphere. The heat-treatment temperature is 400-700 deg.C. By performing the heat-treatment in the non-oxidizing atmosphere after the activation by the laser annealing without interruption, crystal defects are cured while the junction depth of the diffusion region 6 and the n type silicon substrate 1 is maintained.

Inventors

• 👤 Norio Hirashita
• 👤 紀夫 平下
• 👤 博 ▲おの▼田
• 👤 Hiroshi Onoda

Bibliographic Details