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JPS59151484A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor laser device

Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1983-02-18
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Granted: —
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Expires: 2003-02-18
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Abstract

Abstract PURPOSE:To transmit heat generated by a semiconductor laser element efficiently over a heat sink by providing the heat sink with sections to be joined joining with at least two surfaces of a substrate constituting a semiconductor laser device. CONSTITUTION:A section to be joined 4 consisting of recessed section formed to the upper surface of a heat sink 2 in predetermined depth has a bottom 4a and three side-surfaces 4b-4d connected to the bottom 4a. The bottom of the substrate 1a of a semiconductor laser element 1 and three side surfaces except a side surface on the output end surface 1c side of a laser oscillation section 1b are joined with the bottom 4a and side surfaces 4b-4d of the section to be joined 4 by a joining material 3. Consequently, the temperature rise of the element 1 can be inhibited because the back and three side-surfaces of the element 1 are joined with the heat sink 2 and the heat sink 2 is joined up to a section in the vicinity of the oscillation section 1b. Accordingly, an output from a semiconductor laser device can be increased.

Inventors

  • 👤 Kazunori Moriki
  • 👤 森木 一紀
  • 👤 Jun Osawa
  • 👤 大沢 潤
  • 👤 Kenji Ikeda
  • 👤 健志 池田
  • 👤 Wataru Suzaki
  • 👤 須崎 渉

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-01 10:04
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/0235; H01S5/02375; H01S5/024

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