Electrostatic chucking device of sputtering device

Abstract

Abstract PURPOSE:To chuck electrostatically an object to be treated by providing an insulating layer on the surface of an electrode on which the object to be treated is placed, charging between the electrode and the object with said insulating layer in-between, and inserting a current limiting resistor in a current conducting passage for charging. CONSTITUTION:An object 30 to be treated is fed into a treating chamber 11 and is placed on a lifting table 25 in a descending state. The inside of the chamber 11 is put in the condition of enabling formation of plasma ion in this state. The table 25 is then moved upward to bring the top surface of the object 30 into contact with an insulating layer 24, and a DC power source E is connected to a high frequency electrode 23 by closing a switch S1 and opening S2. The object 30 is grounded via the table 25 and a current limiting resistor R and therefore the object 30 is brought into tight contact with the insulator 24 by the electrostatic attraction force between the same and the electrode 23. The table 25 is then lowered and sputtering is performed.

Inventors

• 👤 Noboru Kuriyama
• 👤 昇 栗山

Bibliographic Details