Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a barrier layer to enable to attain stable contact between a substrate and a metal wiring at a semiconductor device by a method wherein the silicide of a high melting point metal is deposited on an n<+> type semiconductor region according to the sputtering method, and the silicide film is annealed at a high temperature to be silicified completely. CONSTITUTION:PSG is applied on the whole surface of a substrate 1 containing an n<+> type diffusion layer 2, anisotropic etching is performed to the PSG film 3 to form a contact hole in the vertical direction, and the film is molten to round off the corners. A molybdenum film 4 is formed as the primary stage of formation of a barrier layer, while the film 4 thereof is in the amorphous condition. A silicified molybdenum silicide film 4' is formed. To perform silicification, the silicide film 4 is annealed at the the high temperature of about 600- 900 deg.C in an atmosphere such as nitrogen, hydrogen, argon or a vacuum. An aluminum thin film 5 is formed according to evaporation, and the aluminum film thereof and the molybdenum silicide film 4' are patterned to form an IC.

Inventors

• 👤 Shigeo Kashiwagi
• 👤 柏木　茂雄

Bibliographic Details