Semiconductor integrated circuit device and manufacture thereof

Abstract

Abstract PURPOSE:To enable to perform a high speed and high frequency operation of the titled device by a method wherein an Si oxide film, having increased film thickness on the region speading from the surface to the bottom face of an Si semiconductor layer, is formed and a semiconductor element such as a transistor is formed in the island region of said Si semiconductor layer. CONSTITUTION:A polycrystalline Si layer 3 is converted into an n<-> type Si layer of low density by single crystallizing the exposed part 1a of an Si substrate 1 and by doping donor impurities thereon. An SiO2 film 6 is formed by performing a thermal oxidization on the surface of the single crystal Si layer 5, and then an Si nitride film 7 is partially formed as an oxidation-resisting substrate, a selective oxidation is performed on the Si layer 5 and a heavy oxide film, reaching an SiO2 film 2 located on the bottom face from the surface of the Si layer. As a result, an Si layer 8 is formed into separated semiconductor island regions 5a, 5b and so on respectively. Then, an n-p-n transistor having a base 9 and an emitter 10 is obtained by performing a p type base selective diffusion and an n type emitter selective diffusion.

Inventors

• 👤 Keisuke Takada
• 👤 啓祐 高田
• 👤 Masato Matsumoto
• 👤 正人 松本

Bibliographic Details