Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To enhance the dimensional accuracy of a semiconductor device by preparing a stepwise difference recessed in the prescribed area at the outer end of the surface of an insular region and an oxidized film continued to an isolated oxidized film and eliminating the lateral intrusion due to an oxidation. CONSTITUTION:A primary silicon oxidized film 8a and the first silicon nitrided film 9a are laminated sequentially on a silicon substrate 6, and with a resist 10 as a mask the film 9a is removed from the film 8a. After the resist 10 is removed, the film 8a is sidewisely etched to the insular region side so that the film 9a is overhung to the film 8a. Subsequently, the second silicon oxidized film 8b and the second silicon nitrided film 9b are formed, the film 9b is etched and removed in the thickness corresponding to the film 9b, and is allowed to remain only on the side face of the insular region. Then, a selective oxidation is performed, and an isolated oxidized film 7 is formed.

Inventors

• 👤 Kenji Kawakita
• 👤 川北　憲司
• 👤 Hiroyuki Sakai
• 👤 坂井　弘之
• 👤 Tsutomu Fujita
• 👤 勉 藤田
• 👤 Toyoki Takemoto
• 👤 竹本　豊樹

Bibliographic Details