Ion implantation

Abstract

Abstract PURPOSE:To prevent the charge up of ions to high ion dose rate ion implantation by a method wherein a conductor film is formed on an insulating film as a shieled mask. CONSTITUTION:A p type well region 2 is formed on an n type single crystalline Si substrate 1, and a field oxide film 3 and a gate oxide film 4 are formed on the surface of the region 2. Furthermore, a poly Si film 5 is formed on the film 4. A shield mask patterned two layers consisting of a photo resist f6 and Al 7 is formed on the substrate 1 applied such processes. Next, p type implantation regions 9 serving as a source and a drain by implanting B ions with high dose rate is formed. The process capability of an ion implantation process when ion implantation is performed by using this method is extremely improved because a high dose rate is materialized. A phot resist film 6 is inserted and exists between a metal mask and an SiO2 film or a poly Si film, thereby eliminating the growth and the inconvenience which follows.

Inventors

• 👤 Masakatsu Yoshida
• 👤 吉田　正勝

Bibliographic Details