Vapor-phase growing method with controlled vapor pressure

Abstract

Abstract PURPOSE:To form a growing layer of a compound semiconductor with little defects and high quality, by keeping the partial pressure of an element of high vapor pressure at an optimal vapor pressure in the vapor-phase growing method of the compound semiconductor. CONSTITUTION:In the case of the epitaxial growth of GaAs, hydrogen gas 1 is passed through a flowmeter 5, bubbled in a liquid, e.g. trimethylgallium, in a vessel 2 and fed to a reaction tube 6. On the other hand, an arsine, etc. from a gas cylinder 3 and a carrier gas 4, e.g. hudrogen gas, are fed through flowmeters 5 to the reaction tube 6 to grow GaAs epitaxially on substrate crystals 9 placed on a carbon boat 8 heated by the induction heating with a coil 7. In the process, the arsine, etc. are fed to the reaction tube 6 so that the partial pressure of As which is an element of high vapor pressure may be the optimal vapor pressure (shown in the table) corresponding to the growth temperature (the temperature of the substrate crystals 9).

Inventors

• 👤 Junichi Nishizawa
• 👤 潤一 西澤
• 👤 Masakazu Morishita
• 👤 正和 森下

Bibliographic Details