Mos device

Abstract

Abstract PURPOSE:To give memory functions to an MOS device by a method wherein two kinds of semiconductors, having a different conductive type respectively, are assembled on an insulative substrate. CONSTITUTION:High density N type regions 11 and 12 are used as a source and a drain, an ordinary density P type region 14 is used as a substrate, and a high density N type polysilicon 16 is used as a gate. An N type channel MOS transistor is formed with them. High density P type regions 13 and 14 are used as a source and a drain, a low density P type region 15 is used as a substrate, and a polysilicon MOS transistor is formed with them. As the P type channel MOS transistor has an N type gate and will be formed on an insulative substrate, it performs an enhancement type operation at the threshold value of phiV or below. Said transistor selectively performs a writing-in operation of information and also performs a reading-out operation in a non-destructive state.

Inventors

• 👤 Masao Fukushima
• 👤 雅夫 福島

Bibliographic Details