Forming method for isolation region of semiconductor integrated circuit

Abstract

Abstract PURPOSE:To obtain the isolation region with narrow width by forming a silicon film to the surface of a substrate with a convex section, selectively removing the silicon film coated to the side surface of the convex section and shaping a concave section to the side surface of the convex section through a removed section. CONSTITUTION:The silicon oxide film 2 is formed to the surface of the silicon substrate 1. A polycrystal silicon film 4 is shaped to the whole surface. Boron is implanted in the film 4, and a high-concentration region 5 and a low-concentation region 6 are molded. The region 6 is removed through etching. The concave section 8 is formed through etching through the removed section 7. The region 5 and the film 2 are removed. A silicon oxide film 9 is buried into the substrate 1, and the isolation region is shaped.

Inventors

• 👤 Hiroshi Momose
• 👤 百瀬　啓

Bibliographic Details