Improvement of polysilicon thin film semiconductor

Abstract

Abstract PURPOSE:To improve electrical conductivity of polycrystal by annealing a poly crystalline Si film deposited on a substrate with laser or electron beam and diffusing hydrogen into the polycrystalline grain boundary using the activated atoms or molecules of hydrogen excited by a micro wave under the particular conditions of reaction temperature and pressure. CONSTITUTION:An ordinary polycrystalline Si thin film deposited on a substrate using monosilane is annealed by the laser or electron beam in order to make large the crystal grain size, the activated atoms or molecules of hydrogen activated by the microwave is diffused deeply into the Si in order to activate the grain boundary and a barrier height of grain boundary is reduced. At this time, the hydrogen activating treatment is carried out at the reaction temperature of 200-500 deg.C and pressure of 0.2-2.0 Torr. Thereby, electrical characteristic of polycrystalline Si thin film is improved and a semiconductor substrate having excellent quality for industrial use can be obtained.

Inventors

• 👤 Keiji Kobayashi
• 👤 啓二 小林
• 👤 Yasuo Nakai
• 👤 康雄 中井

Bibliographic Details