Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve characteristics and the like, by forming a gate electrode by materials having a low resistivity and the like, with respect to an FET, with the alignment of the gate electrode and an ion implantation region being kept equivalent with a self-aligning method. CONSTITUTION:A gate pattern 6 is formed with the first material layer on an semi-insulating GaAs substrate 1. With the pattern as at least a part of a mask, the ion implantation is performed. An insulating film 10 is deposited and formed on a wafer. Thereafter, the pattern 6 is selectively removed together with the insulating film 10 thereon. Thus openings, in which a gate pattern is to be formed are provided. A heat treatment is performed to activate the implanted ions. Thereafter, the gate electrode, which has a multiple layer structure made of a material having a low resistivity or the combination of the materials as the second material, is formed. Thus the characteristics and reliability are improved.

Inventors

• 👤 Shigeru Okamura
• 👤 茂 岡村

Bibliographic Details