Gettering for crystal defect

Abstract

Abstract PURPOSE:To effectively getter a residual crystal defect or heavy metal contamination by a method wherein oxygen ions are previously implanted into amorphous silicon at a desired acceleration voltage when the amorphous silicon is fused by laser annealing for single crystallization. CONSTITUTION:High dosed oxygen ions 4 are equally implanted into the whole face of the amorphous silicon film 3 on an insulating film 2 formed by approaching to a silicon single crystalline substrate 1. Next, high-output lasers 5 are aimed at the whole surface of the film 3. Accordingly, the structure of the film 3 is converted into a single crystalline silicon film 6 and the implanted oxygen ions are equally diffused into the film 6. Furthermore, lasers 5' are aimed at the film 3. This forms an oxygen-free region 7 on the surface of the single crystalline silicon film. Finally, low-temperature annealing is applied to the single crystalline silicon film and a microdefection generating region 8 using oxygen deposition as a nucleus and a non-defective region 9 are simultaneously formed in the film 6.

Inventors

• 👤 Hirozo Takano
• 👤 高野　博三
• 👤 Shigeo Uotani
• 👤 魚谷　重雄

Bibliographic Details