Semiconductor device

Abstract

Abstract PURPOSE:To realize curtailment of processes and improvement in yield by providing an interlayer insulation layer mainly consisting of the element same as that of semiconductor forming substance to a through hole of insulation film. CONSTITUTION:An element forming plate SiO2 film 2 is deposited on the P type Si substrate 1 and the through holes 11, 12 are provided thereon. Then a poly- crystal or amorphous Si layer 3 is epitaxially formed and it is converted into a single crystal by irradiating a laser beam. At this time, the interlayer wiring layers 15, 16 are also converted into the single crystal layer. The P type or N type impurity is diffused as required into the layer 3 and it is connected to the substrate or element. In the same way, a object device can be completed by forming the interlayer insulation film 4, through holes 9, 10, single crystal layer 5 and interlayer wiring layers 13, 14.

Inventors

• 👤 Masahiko Nitsuta
• 👤 仁田　匡彦

Bibliographic Details