Manufacturing method of semiconductor device

Abstract

Abstract PURPOSE:To reduce the current in the reverse direction in a P-N junction, by the structure provided with a region including defects formed by ion implantation at least at a part, which is located in the vicinity of the P-N junction formed in a semiconductor substrate and under the junction, or at the surrounding of the junction. CONSTITUTION:A heat oxide film 102 and silicon nitride film 103 are selectively formed on a P type silicon substrate 101. With said silicon nitride film 103 as a mask, a field heat oxide film 104 is formed. Then aluminum evaporated film 105 is selectively formed. O<+> ions are selectively implanted at about 10<13>- 10<15>cm<-2> by energy of 1,000KeV. In this way, a layer 106, which includes oxygen with high concentration whose center is located at the part under the surface of the silicon substrate 101 about 2mum deep is formed. Thereafter the Al film 105 is removed, and the N-channel silicon gate MOS type semiconductor device 112 is obtained by a usual silicon gate MOS process.

Inventors

• 👤 Kuniyuki Hamano
• 👤 浜野　邦幸

Bibliographic Details