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JPS5883281A Expired / Lapsed JP ⏱️ 0.0 years remaining

Measuring method for electric temperature characteristic of semiconductor element

Assignee: Toshiba Corp
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Filing: 1981-11-12
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Granted: —
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Expires: 2001-11-12
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Abstract

Abstract PURPOSE:To measure the electric temperature characteristic of a semiconductor element, by outputting a test signal and power from a power source alternately to the element to be measured. CONSTITUTION:In the initial state, since a relay 231 is not excited, a switch SW' is turned on, and a switch SW is turned off, and a transistor TR tester 22 and a TR 21 to be measured are connected to measure the electric characteristic of the TR 21. A synchronizing signal is outputted from the TR tester 22 to drive the relay 231 in a test circuit 23, and the TR 21 to be measured 21 and a power applying power source 24 are connected to supply power to the TR 21. Next, when the synchronizing signal disappears, the TR 21 to be measured and the TR tester 22 are connected again, and the electric characteristic is measured again.

Inventors

  • 👤 Toshitaka Watanabe
  • 👤 渡辺 敏隆

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 07:55
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2608; G01R31/2619

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