Semiconductor laser

Abstract

Abstract PURPOSE:To improve the reliability of the titled semiconductor laser by a method wherein two grooves are cut on the laminated material consisting of a buffer layer, an active layer and a clad layer, while said grooves are buried with a current blocking layer, another current blocking layer which is different from the above in conductive type is formed on the whole surface including the grooves, and the conductive type at the part corresponding to the former blocking layer is varied from that of the other part. CONSTITUTION:An n type InP buffer layer 11, a non-doped InGaAsP active layer 12 and a p type InP clad layer 13 are laminated and epitaxially grown on an n type InP substrate 10 in the (001) direction, an SiO2 film is covered on the whole surface, and two grooves 21 and 22 are formed in parallel to the <110> direction by performing a photolithographic method in such a manner that the grooves will be entering into the layer 11. Then, the SiO2 film is removed, the grooves 21 and 22 are buried with an InP first current blocking layer 31, and an n type InP second current blocking layer 32 is grown on the whole surface including the layer 31. Subsequently, a p type InGaAsP cap layer 33 is provided, and a p type conversion layer 41 is formed by diffusion in the layer 13a located on the mesa part 23, consisting of a layer 12 which is located between the grooves 21 and 22.

Inventors

• 👤 Isao Kobayashi
• 👤 功郎 小林
• 👤 Ikuo Mito
• 👤 郁夫 水戸

Bibliographic Details