Semiconductor device

Abstract

Abstract PURPOSE:To obtain a display device by a method wherein semiconductors in the same shape are superposed in three layers on a conductive layer on a substrate, with the first and third layers as source and drain layers, gate electrodes are provided on side surfaces of the second layer via an insulating film, and a capacity filled with liquid crystal is connected to the first or third layer. CONSTITUTION:A lead 12 is formed on a glass plate in the X direction, and non- single crystal N layer 3, I layer 4 and N layer 5 are formed by silane glow discharge. A mask is applied, and layers 5-3 are vertically etched resulting in the formation of layrs 13-15 on the layer 12. They are covered with an SixC1-x by a plasma CVD method, and a gate insulating film 16 is formed on the side surface of the layer 14. Windows are selectively opened 7, 8 on the film 16, an electrode of metal or N<+> poly Si is formed, a gate electrode 17 is settled in the Y direction, a clear electrode 24 of the capacity 31 filled with the liquid crystal 26 is provided on the layer 13, and an electrode 27 crossed with the electrode 24 in right angles is provided on the lower surface of the glass plate 28 above. Since the mobility of non-single crystal Si is approx. 1/100 of single crystal, the response is provided with high speed by forming the thickness of the layer 14 into a 1mum short channel and promoting the FET characteristic, accordingly a display is performed by the shield effect of an IGF itself.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details