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JPS5870533A Expired / Lapsed JP ⏱️ 0.0 years remaining

Reactive ion etching

Assignee: Hitachi Ltd
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Filing: 1981-10-23
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Granted: —
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Expires: 2001-10-23
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Abstract

Abstract PURPOSE:To apply uniform reactive ion etching by a method wherein an etching period and an idling period are alternately repeated during one time of etching. CONSTITUTION:In a reactive ion etching used a parallel-plate electrode 2, the temperature of a substrate rises by the collision of ions, high-speed neutrons, thermal radiation from plasma, and chemical reaction. At the time, the part having a large etching area differs from that having a small area in surface termperature because of the relation of heat radiation an the uniformity of etching rate is missed to unequalize pattern width. Then, high-frequency voltage is intermitted by switching operation and areaction product influence over etching is decreased by excluding the reaction product during a non-etching period and extremely uniform ething can be applied by constantly maintaining the surface temperature even if the etching area differs in the substrate.

Inventors

  • 👤 Masakatsu Saito
  • 👤 正勝 斎藤
  • 👤 Akitsuna Yuhara
  • 👤 章綱 湯原
  • 👤 Isao Oshima
  • 👤 大島 勲

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-01 04:27
CPC Classifications
H; H10; H10P; H10P50/00

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