Manufacture of thin film

Abstract

Abstract PURPOSE:To provide a thin film with high orientation, by a method wherein the film is formed by eliminating atoms that do not incident in the vertical direction agaist a substrate. The method is related to the dry process such as the sputtering, the vacuum deposition and the ion plating processes. CONSTITUTION:RF diode sputtering device is used to form film, and it is fully baked. Before starting of sputtering, the vacuum degree in a belljar must be made less than 5.0X10<-7> Torr. A mask made of stainless steel is attached on the front surface of a substrate. Film is formed for each mask Fig (d), (e) and (f) show-the masks eliminating the atoms that incidents in the inclined direction. H-cut mask is used to form film on the atoms that incident in the vertical direction against the subtrate. The length of a pipe 4 is in order of (d), (e), (f). The angle between the center P of the substrate 3 and the upper edge of the pipe 4, that is potential angle alpha from the substrate center becomes 30 deg. for (d),40 deg. for (e), and 60 deg. for (f). The film made by using the masks is I0002/d larger than the one made without using the masks, and its crystallizability as well as the orientation in the C axis direction is improved.

Inventors

• 👤 Shigeru Hirono
• 👤 廣野　滋
• 👤 Yasushi Maeda
• 👤 前田　安
• 👤 Iwao Hatakeyama
• 👤 畠山　巌

Bibliographic Details