Semiconductor laser and manufacture thereof

Abstract

Abstract PURPOSE:To readily manufacture a semiconductor laser by providing an N type InP current block layer formed in the shape reducing the thickness from a mesa stripe side toward the flat part, a P type InP clad layer covering the upper surface of the block layer, an InGaAsP active layer and an N type InP clad layer in an InGaAsP semiconductor laser having an InP substrate, thereby providing controlled current injection width and a light waveguide region corresponding to the width. CONSTITUTION:A photoresist strip 20 parallel to (110) direction is formed on a P type InP substrate 1 of (001) plane, is etched, thereby forming a mesa stripe 30. The stripe 30 is exfoliated, a growing mesa substrate 100 is prepared, and multilayer films are laminated by liquid epitaxial growth. The layer 2 grown from two-phase solution is not grown on the top of the mesa. Then, the layer 3 of approx. 0.5mum and InGaAsP active layer 4 of approx. 0.2mum and N type InP clad layer 5 are sequentially laminated. Since the layer 3 is thin to 0.5mum, the injection current is concentrated to a bent InGaAsP active layer region 41 to emit a light to perform recombination. Since the layer 4 is continuous, no disorder occurs in the radiation pattern with extremely smoothness.

Inventors

• 👤 Ikuo Mito
• 👤 郁夫 水戸
• 👤 Mitsuhiro Kitamura
• 👤 北村　光弘
• 👤 Isao Kobayashi
• 👤 功郎 小林

Bibliographic Details