Amorphous silicon solar battery containing fluorine

Abstract

Abstract PURPOSE:To enable to largely improve the efficiency of a solar battery by providing an intrinsic amorphous silicon layer hydrogenated at p-i boundary in a pin type solar battery which employs a-Si:F:H. CONSTITUTION:A substrate 1 and a transparent electrode 5 are provided, and an intrinsic a-Si:H layer 6 is obtained by diluting and glow discharge decomposing silane (SiH4) or polysilane (SinH2n+2), preferably less than 1,000Angstrom . After the intrinsic a-Si:F:H layer 3 is accumulated, it is annealed with hydrogen plasma, or said intrinsic a-Si:H may be attached between the layer 3 and the n type amorphous semiconductor layer 7. The P type layer may preferably employ a- SiC:H, a-SiC:F:H, a-SiN:H, a-SiN:F:H, a-SiCN:H, or a-SiCH:F:H, and the n type layer may preferably employ the amorphous semiconductor thereof, which have excellent chemical resistance and HF resistance. The thickness of the layer 7 is normally 100-500Angstrom , and the thickness of the layer 3 is 2,000-10,000Angstrom . The thickness of the p type amorphous semiconductor layer 8 is 70-150Angstrom .

Inventors

• 👤 Yoshihiro Hamakawa
• 👤 圭弘 浜川
• 👤 Yoshihisa Owada
• 👤 善久 太和田

Bibliographic Details